This is a high power, broadband, Gallium Nitride (GaN) RF amplifier that operates from 1.0 to 2.5 GHz. This unit will operate down to 1000 MHz with no degradation in performance, ideal for broadband military platforms as well as commercial applications. This RF module employs temperature compensation to keep the gain constant over the temperature extremes. The power response changes by a ±0.75 dB typical over temperature.This amplifier has a typical P1dB of 35 watts at room temperature. Saturated output power across the band is typically 50 watts.
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