This is is a high power, broadband, Gallium Nitride (GaN) RF amplifier that operates from 500 MHz to 3.0 GHz, ideal for broadband military platforms as well as commercial applications. This amplifier was designed for broad band communication systems platforms. This amplifier has a minimum P3dB of 50 watts at room temperature. Output power is typically 100 watts across the band. Noise figure at room temperature is 11.0 dB typical. This amplifier offers a typical gain of 35 dB with a typical gain flatness of ± 2.5 dB. The power and gain flatness across the band is extremely flat for the bandwidth. Input and Output VSWR is 2.0:1 maximum. This amplifier operates from -40C to +85C base plate temperature.
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